UPD16813 查看數據表（PDF） - NEC => Renesas Technology

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UPD16813

MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

NEC => Renesas Technology 

DATA SHEET

MOS INTEGRATED CIRCUIT

µPD16813

MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

DESCRIPTION

The µPD16813 is a monolithic dual H bridge driver circuit which uses power MOS FETs in its driver stage. By

complementing the P channel and N channel of the output stage, the circuit current has been substantially inproved

as compared with that of conventional charge pump drivers.

The µPD16813 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for

the head actuator of an FDD.

FEATURES

• Low ON resistance (sum of ON resistors of top and bottom transistors)

RON = 2.0 Ω TYP.

• Low current consumption: IDD = 100 µA MAX.

• Noise reduction circuit that operates when INC is OFF.

• Compact surface mount package: 16-pin plastic SOP (300 mil)

PIN CONFIGURATION (Top View)

VM1

1

1A

2

PGND1

3

2A

4

VDD

5

IN1

6

IN2

7

INC

8

16

NC

15

1B

14

PGND2

13

2B

12

VM2

11

SEL

10

NC

9

DGND

ORDERING INFORMATION

Part Number

µPD16813GS

Package

16-pin plastic SOP (300 mil)

Document No. S10590EJ2V0DS00 (2nd edition)

Date Published July 1997 N

Printed in Japan

©

1997

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