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2N6438 查看數據表(PDF) - ON Semiconductor

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2N6438
ON-Semiconductor
ON Semiconductor ON-Semiconductor
2N6438 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2N6437 2N6438
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07
0.02
0.05
0.03
0.02
0.01
0.01
0.01
SINGLE
PULSE
0.02 0.03 0.05 0.1
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
ZθJC(t) = r(t)RθJC
RθJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
20 30 50
100 200 300 500 1000
100
50
200 µs
20
10
5.0 TJ = 200°C
1.0 ms
5.0 ms
dc
2.0
1.0
BONDING WIRE LIMITED
0.5
THERMALLY LIMITED
0.2
TC = 25°Cą(SINGLE PULSE)
PULSE DUTY CYCLE v 10%
0.1
SECOND BREAKDOWN LIMĆ
0.05
CITUERDVES APPLY
0.02
BELOW RATED VCEO
2N6437
2N6438
0.01
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
VCE, COLLECTORĆEMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
3.0
2.0
ts
1.0
0.7
0.5
tf
0.3
0.2
VCC = 80 V
IB1 = IB2
IC/IB = 10
TJ = 25°C
0.1
0.07
0.05
0.03
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn-Off Time
20 30
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
4000
3000
2000
Cib
TJ = 25°C
1000
Cob
700
500
300
200
0.1 0.2
0.5 1.0 2.0
5.0 10 20 50 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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