SLVU2.8TG 查看數據表（PDF） - Semtech Corporation

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SLVU2.8TG

Low Voltage EPD TVS Diode For ESD and Latch-Up Protection

Semtech Corporation 

SLVU2.8

PROTECTION PRODUCTS

Absolute Maximum Rating

Rating

Peak Pulse Power (tp = 8/20ms)

Peak Pulse Current (tp = 8/20ms)

Lead Soldering Temperature

Operating Temperature

Storage Temperature

Symbol

Ppk

IPP

TL

TJ

TSTG

Value

400

24

260 (10 seconds)

-55 to +125

-55 to +150

Units

Watts

A

oC

oC

oC

Electrical Characteristics

SLVU2.8

Parameter

Reverse Stand-Off Voltage

Punch-Through Voltage

Snap-Back Voltage

Reverse Leakage Current

Clamping Voltage

Clamping Voltage

Clamping Voltage

Clamping Voltage

Clamping Voltage

Junction Capacitance

Junction Capacitance

Steering Diode Characteristics

Reverse Breakdown Voltage

Reverse Leakage Current

Forward Voltage

Symbol

VRWM

VPT

VSB

IR

VC

VC

VC

VC

VC

Cj

Cj

VBR

IRD

VF

Conditions

Pin 3 to 1 or Pin 2 to 1

IPT = 2µA, Pin 3 to 1

ISB = 50mA, Pin 3 to 1

VRWM = 2.8V, T=25°C

Pin 3 to 1 or Pin 2 to 1

IPP = 2A, tp = 8/20µs

Pin 3 to 1

IPP = 5A, tp = 8/20µs

Pin 3 to 1

IPP = 24A, tp = 8/20µs

Pin 3 to 1

IPP = 5A, tp = 8/20µs

Pin 2 to 1

IPP = 24A, tp = 8/20µs

Pin 2 to 1

Pin 3 to 1 & 2

(Pin 1 & 2 tied together)

VR = 0V, f = 1MHz

Pin 2 to 1 (pin 3 N.C.)

VR = 0V, f = 1MHz

Minimum

3.0

2.8

IT= 10µA, Pin 3 to 2

40

VRWM = 2.8V, T=25°C

Pin 3 to 2

IF= 1A, Pin 2 to 3

ã 2000 Semtech Corp.

2

Typical

70

5

Maximum

2.8

1

Units

V

V

V

µA

3.9

V

7

V

12.5

V

8.5

V

15

V

100

pF

10

pF

V

1

µA

2

V

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