IRFD320 查看數據表（PDF） - Fairchild Semiconductor

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IRFD320

0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET

Fairchild Semiconductor 

Data Sheet

IRFD320

July 1999 File Number 2325.4

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0.5A, 400V, 1.800 Ohm, N-Channel

Power MOSFET

This N-Channel enhancement mode silicon gate power field

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a specified level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17404.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFD320

HEXDIP

IRFD320

NOTE: When ordering, use the entire part number.

Features

• 0.5A, 400V

• rDS(ON) = 1.800Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

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©2001 Fairchild Semiconductor Corporation

IRFD320 Rev. A

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