MTP1306 查看數據表（PDF） - ON Semiconductor
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MTP1306 Datasheet PDF : 8 Pages
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MTP1306
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 38 Adc)
(VGS = 5.0 Vdc, ID = 38 Adc)
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 75 Adc)
(VGS = 10 Vdc, ID = 38 Adc, TJ = 150°C)
Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc,
RG = 4.7 Ω)
Gate Charge
(VDS = 24 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min
Typ
Max
Unit
30
−
Vdc
−
µAdc
−
−
10
−
−
100
−
−
100
nAdc
Vdc
1.0
1.5
2.0
mW
−
5.8
6.5
−
7.4
8.5
Vdc
−
0.44
0.5
−
−
0.38
15
55
−
mhos
−
2560
3584
pF
−
1305
1827
−
386
772
−
17
35
ns
−
170
340
−
68
136
−
145
290
−
50
70
nC
−
8.3
−
−
25.3
−
−
17.2
−
Vdc
−
0.75
1.1
−
0.64
−
−
84
−
ns
−
35
−
−
53
−
−
0.13
−
µC
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