IMX2 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd
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IMX2 Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate Transistors
IMX2 DUAL TRANSISTOR (NPN+NPN)
FEATURES
· Low Cob ,Cob = 2.0 pF (Typ).
SOT-23-6L
MARKING:
6
Equivalent Circuit
1
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Value
60
50
7
0.15
0.3
417
150
-55～+150
Parameter
Symbol
Test condition
Min
Typ
Collector-base breakdown voltage
V(BR)CBO IC=50µA, IE=0
60
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0
50
Emitter-base breakdown voltage
V(BR)EBO IE=50µA, IC=0
7
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=7V, IC=0
DC current gain
hFE
VCE=6V, IC=1mA
180
Collector-emitter saturation voltage
VCE(sat) IC=50mA, IB=5mA
Transition frequency
fT
VCE=12V,IC=2mA,f=100MHz
90
Collector output capacitance
Cob
VCB=12V, IE=0, f=1MHz
2.0
Unit
V
V
V
A
W
℃/W
℃
℃
Max Unit
V
V
V
0.1
µA
0.1
µA
390
0.4
V
MHz
3.5
pF
www.cj-elec.com
1
A-2,Apr,2016
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