RF1S60P03 查看數據表（PDF） - Harris Semiconductor
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RF1S60P03 Datasheet PDF : 6 Pages
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Specifications RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Electrical Specifications TC = +25oC, Unless Otherwise Specified.
PARAMETERS
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
tD(ON)
tR
tD(OFF)
tF
tOFF
QG(TOT)
QG(-10)
QG(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = -30V,
VGS = 0V
TC = +25oC
TC = +150oC
VGS = ±20V
ID = 60A, VGS = -10V
VDD = -15V, ID = 60A
RL = 0.25Ω, VGS = -10V
RGS = 2.5Ω
VGS = 0 to -20V
VGS = 0 to -10V
VDD = -24V,
ID = 60A,
RL = 0.4Ω
VGS = 0 to -2V
VDS = -25V, VGS = 0V
f = 1MHz
MIN
TYP MAX UNITS
-30
-
-
V
-2
-
-4
V
-
-
-1
µA
-
-
-50
µA
-
-
100
nA
-
-
0.027
Ω
-
-
140
ns
-
20
-
ns
-
75
-
ns
-
35
-
ns
-
40
-
ns
-
-
115
ns
-
190
230
nC
-
100
120
nC
-
7.5
9
nC
-
3000
-
pF
-
1500
-
pF
-
525
-
pF
-
-
0.85 oC/W
-
-
80
oC/W
Source-Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Recovery Time
VSD
ISD = -60A
tRR
ISD = -60A, dISD/dt = -100A/µs
MIN
TYP
MAX
UNITS
-
-
-1.75
V
-
-
200
ns
4-52
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