A29010BV-55F 查看數據表（PDF） - AMIC Technology

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A29010BV-55F

128K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory

AMIC Technology 

A29010B Series

Requirements for Reading Array Data

To read array data from the outputs, the system must drive the

CE and OE pins to VIL. CE is the power control and selects

the device. OE is the output control and gates array data to the

output pins. WE should remain at VIH all the time during read

operation. The internal state machine is set for reading array

data upon device power-up, or after a hardware reset. This

ensures that no spurious alteration of the memory content

occurs during the power transition. No command is necessary

in this mode to obtain array data. Standard microprocessor read

cycles that assert valid addresses on the device address inputs

produce valid data on the device data outputs. The device

remains enabled for read access until the command register

contents are altered.

See "Reading Array Data" for more information. Refer to the AC

Read Operations table for timing specifications and to the Read

Operations Timings diagram for the timing waveforms, lCC1 in

the DC Characteristics table represents the active current

specification for reading array data.

Writing Commands/Command Sequences

To write a command or command sequence (which includes

programming data to the device and erasing sectors of

memory), the system must drive WE and CE to VIL, and OE

to VIH. An erase operation can erase one sector, multiple

sectors, or the entire device. The Sector Address Tables

indicate the address range that each sector occupies. A "sector

address" consists of the address inputs required to uniquely

select a sector. See the "Command Definitions" section for

details on erasing a sector or the entire chip, or

suspending/resuming the erase operation.

After the system writes the autoselect command sequence, the

device enters the autoselect mode. The system can then read

autoselect codes from the internal register (which is separate

from the memory array) on I/O7 - I/O0. Standard read cycle

timings apply in this mode. Refer to the "Autoselect Mode" and

"Autoselect Command Sequence" sections for more

information.

ICC2 in the Characteristics table represents the active current

specification for the write mode. The "AC Characteristics"

section contains timing specification tables and timing diagrams

for write operations.

Program and Erase Operation Status

During an erase or program operation, the system may check

the status of the operation by reading the status bits on I/O7 -

I/O0. Standard read cycle timings and ICC read specifications

apply. Refer to "Write Operation Status" for more information,

and to each AC Characteristics section for timing diagrams.

Standby Mode

When the system is not reading or writing to the device, it can

place the device in the standby mode. In this mode, current

consumption is greatly reduced, and the outputs are placed in

the high impedance state, independent of the OE input.

The device enters the CMOS standby mode when the CE is

held at VCC ± 0.5V. (Note that this is a more restricted voltage

range than VIH.) The device enters the TTL standby mode when

CE is held at VIH. The device requires the standard access

time (tCE) before it is ready to read data.

If the device is deselected during erasure or programming, the

device draws active current until the operation is completed.

ICC3 in the DC Characteristics tables represents the standby

current specification.

Output Disable Mode

When the OE input is at VIH, output from the device is

disabled. The output pins are placed in the high impedance

state.

Sector

A16

SA0

0

SA1

0

SA2

1

SA3

1

Table 2. A29010B Block Sector Address Table

A15

Sector Size (Kbytes)

0

32

1

32

0

32

1

32

Address Range

00000h - 07FFFh

08000h - 0FFFFh

10000h - 17FFFh

18000h - 1FFFFh

PRELIMINARY (June, 2016, Version 0.0)

5

AMIC Technology, Corp.

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