AUIRF7103QTR 查看數據表（PDF） - Infineon Technologies

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AUIRF7103QTR

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Infineon Technologies 

AUIRF7103Q

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

V(BR)DSS/TJ

RDS(on)

VGS(th)

gfs

IDSS

IGSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Trans conductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

50 ––– ––– V VGS = 0V, ID = 250µA

––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA

–––

–––

–––

–––

130

200

mVVGGSS

=

=

10V, ID = 3.0A 

4.5V, ID = 1.5A 

1.0 ––– 3.0 V VDS = VGS, ID = 250µA

3.4 ––– ––– S VDS = 15V, ID = 3.0A

––– ––– 2.0

––– ––– 25

µA

VDS =40V, VGS = 0V

VDS = 40V,VGS = 0V,TJ =55°C

–––

–––

––– 100

––– -100

nA

VGS = 20V

VGS = -20V

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain Charge

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Diode Characteristics

––– 10 15

ID = 2.0A

––– 1.2 ––– nC VDS = 40V

––– 2.8 –––

VGS = 10V

––– 5.1 –––

VDD = 25V

–––

–––

1.7

15

–––

–––

ns

ID = 1.0A

RG = 6.0

––– 2.3 –––

RD = 25

––– 255 –––

VGS = 0V

––– 69 ––– pF VDS = 25V

––– 29 –––

ƒ = 1.0MHz

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– 3.0

––– ––– 12

MOSFET symbol

A

showing the

integral reverse

p-n junction diode.

––– ––– 1.2 V TJ = 25°C,IS = 1.5A,VGS = 0V 

––– 35 53 ns TJ = 25°C ,IF = 1.5A,

––– 45 67 nC di/dt = 100A/µs 

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Pulse width 400µs; duty cycle  2%.

 Surface mounted on 1" in square Cu board.

 Starting TJ = 25°C, L = 4.9mH, RG = 25, IAS = 3.0A. (See Fig. 12)

ISD 2.0A, di/dt 155A/µs, VDD V(BR)DSS, TJ  175°C.

 Limited by TJmax , see Fig.16b, 16c, 19, 20 for typical repetitive avalanche performance.

2

2015-9-30

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