BS828 查看數據表（PDF） - General Semiconductor

零件编号

产品描述 (功能)

生产厂家

BS828

DMOS Transistors (N-Channel)

General Semiconductor 

BS828

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Drain-Source Breakdown Voltage

at ID = 100 µA, VGS = 0

Gate-Body Leakage Current

at VGS = 15 V, VDS = 0

Drain Cutoff Current

at VDS = 130 V, VGS = 0

at VDS = 70 V, VGS = 0.2 V

Gate-Source Threshold Voltage

at VGS = VDS, ID = 1 mA

Drain-Source ON Resistance

at VGS = 2.8 V, ID = 100 mA

Thermal Resistance Junction to Substrate

Backside

Thermal Resistance Junction to Ambient Air

Capacitances

at VDS = 20 V, VGS = 0, f = 1 MHz

Input Capacitance

Output Capacitance

Feedback Capacitance

Switching Times

at VGS = 10 V, VDS = 10 V, RD = 100 Ω

Turn-On Time

Turn-Off Time

1) Device on fiberglass substrate, see layout

Symbol

Min.

Typ.

V(BR)DSS

240

250

IGSS

–

–

IDSS

–

–

IDSX

–

–

VGS(th)

–

1.5

RDS(ON)

–

5.5

RthSB

–

–

RthJA

–

–

Ciss

–

80

Coss

–

20

Crss

–

5

ton

–

5

toff

–

50

.30 (7.5)

.12 (3)

.59 (15)

.03 (0.8)

.47 (12)

0.2 (5)

.04 (1) .08 (2)

.04 (1)

.08 (2)

.06 (1.5)

.20 (5.1)

Dimensions in inches (millimeters)

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

Max.

Unit

–

V

10

nA

1

µA

25

µA

2.5

V

8

Ω

3201)

K/W

4501)

K/W

–

pF

–

pF

–

pF

–

ns

–

ns

Share Link: