MMBT5400 查看數據表（PDF） - Diotec Semiconductor Germany

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MMBT5400

Surface Mount General Purpose Si-Epi-Planar Transistors

Diotec Semiconductor Germany  

MMBT5400 / MMBT5401

Characteristics (Tj = 25°C)

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 100 V, (E open)

- VCB = 120 V, (E open)

MMBT5400

MMBT5401

- VCB = 100 V, Tj = 100°C, (E open)

- VCB = 120 V, Tj = 100°C, (E open)

MMBT5400

MMBT5401

Emitter-Base-cutoff current – Emitter-Basis-Reststrom

- VEB = 4 V, (C open)

Gain-Bandwidth Product – Transitfrequenz

- IC = 10 mA, - VCE = 10 V, f = 100 MHz

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE = ie = 0, f = 1 MHz

Noise figure – Rauschzahl

- VCE = 5 V, - IC = 200 µA,

RS = 10 Ω, f = 1 kHz

MMBT5400

MMBT5401

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

Marking - Stempelung

- ICBO

- ICBO

- ICBO

- ICBO

- IEBO

fT

CCBO

F

F

RthA

Kennwerte (Tj = 25°C)

–

–

50 nA

–

–

50 nA

–

–

50 µA

–

–

50 µA

–

–-

50 nA

100 MHz

–

300 MHz

–

–

6 pF

–

–

–

–

–

8 dB

< 420 K/W 1)

MMBT5550 / MMBT5551

MMBT5400 = 2L

MMBT5401 = 2Lx

120

[%]

100

80

60

40

20

Ptot

0

0 TA 50

100

150 [°C]

Power dissipation versus ambient temperature 1)

Verlustleistung in Abh. von d. Umgebungstemp.1)

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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