MMBT5401(2004) 查看數據表（PDF） - Fairchild Semiconductor
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MMBT5401 Datasheet PDF : 6 Pages
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MMBT5401
PNP General Purpose Amplifier
• This device is designed as a general purpose amplifier and switch for
C
applications requiring high voltage.
E
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
-150
-160
-5.0
-600
-55 ~ 150
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
B SOT-23
Mark: 2L
Units
V
V
V
mA
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BVCEO
BVCBO
BVEBO
ICBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics *
IC = -1.0mA, IB = 0
IC = -100µA, IE = 0
IE = -10µA, IC = 0
VCB = -120V, IE = 0
VCB = -120V, IE = 0, Ta = 100°C
VEB= -3.0V, IC=0
hFE
DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage
VBE (sat) Base-Emitter Saturation Voltage
Small Signal Characterics
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -50mA, VCE = -5.0V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
fT
Current Gain Bandwidth Product
IC = -10mA, VCE = -10V,
f = 100MHz
Cob
Output Capacitance
NF
Noise Figure
VCB = -10V, IE = 0, f = 1MHz
IC = -250µA, VCE = -5.0V, RS = 1.0KΩ
f = 10Hz to 15.7KHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Min.
-150
-160
-5.0
50
60
50
100
Max. Units
V
V
V
-50
nA
-50
µA
-50
nA
240
-0.2
V
-0.5
V
-1.0
V
-1.0
V
300 MHz
6.0
pF
8.0
dB
©2004 Fairchild Semiconductor Corporation
Rev. B1, August 2004
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