DS2103SY25 查看數據表（PDF） - Dynex Semiconductor

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DS2103SY25

Rectifier Diode

Dynex Semiconductor 

DS2103SY

SURGE RATINGS

Symbol

Parameter

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

Conditions

10ms half sine; Tcase = 175oC

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase =175oC

VR = 0

Max. Units

65.0

kA

21.1 x 106 A2s

81.0

kA

33 x 106 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

R

th(c-h)

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

T

Storage temperature range

stg

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 43.0kN

with mounting compound

Double side

Single side

Forward (conducting)

Reverse (blocking)

Min. Max. Units

- 0.0095 oC/W

- 0.019 oC/W

- 0.019 oC/W

- 0.002 oC/W

- 0.004 oC/W

-

200

oC

-

175

oC

–55 175

oC

38.0 47.0 kN

3/7

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