2SC3163 查看數據表（PDF） - New Jersey Semiconductor
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2SC3163 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 0.2A; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 3A; IB= 0.6A
VsE(sat) Base-Emitter Saturation Voltage
lc= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
ICER
Collector Cutoff Current
VCE= 400V ; RBE= 1 00 fi
IEBO
Emitter Cutoff Current
VEB= 7V; lc= 0
ripe
DC Current Gain
lc= 3A; VCE= 2V
ft
Current-Gain—Bandwidth Product lc=0.6A; VCE= 10V
Switching times
ton
Turn-On Time
'stg
Storage Time
tf
Fall Time
lc=3A; !Bi=0.6A; IB2=1.2A;
RL= 50 fi ; VBB2= 4V
2SC3163
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
100 u A
100 u A
100 u A
10 w A
10
20
MHz
0.3 u s
1.0 u s
0.1 p s
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