AFM06P3-212 查看數據表（PDF） - Alpha Industries

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AFM06P3-212

Ka Band Power GaAs MESFET Chips

Alpha Industries 

Ka Band Power GaAs MESFET Chips

AFM06P3-212, AFM06P3-213

Features

s 22 dBm Output Power @ 18 GHz

s High Associated Gain, 9 dB @ 18 GHz

s High Power Added Efficiency, 23%

s Broadband Operation, DC–18 GHz

s 0.25 µm Ti/Pd/Au Gates

s Passivated Surface

Description

The AFM06P3-212, 213 are high performance power

GaAs MESFET chips in an industry standard ceramic

micro-x package, having a gate length of 0.25 µm and a

total gate periphery of 600 µm. These devices have

excellent gain and power performance through 26 GHz,

making them suitable for a wide range of commercial and

military applications in oscillator and amplifier circuits. They

employ Ti/Pd/Au gate metallization and surface

passivation to ensure a rugged, reliable part.

213

Drain

Source

Drain

Source

Gate

Source

Source

Gate

212

Absolute Maximum Ratings

Characteristic

Drain to Source Voltage (VDS)

Gate to Source Voltage (VGS)

Drain Current (IDS)

Gate Current (IGS)

Total Power Dissipation (PT)

Storage Temperature (TST)

Channel Temperature (TCH)

Value

6V

-4 V

IDSS

1 mA

1.1 W

-65 to +150°C

175°C

Electrical Specifications at 25°C

Parameter

Saturated Drain Current (IDSS)

Transconductance (gm)

Pinch-Off Voltage (VP)

Gate to Drain Breakdown

Voltage (Vbgd)

Output Power at 1 dB

Compression (P1 dB)

Gain at 1 dB Compression (G1 dB)

Power Added Efficiency (ηadd)

Test Conditions

VDS = 2 V, VGS = 0 V

VDS = 5 V, IDS = 1.5 mA

IGD = 600 µA

VDS = 5 V, IDS = 70 mA, F = 18 GHz

Min.

130.0

90.0

1.0

8.0

Typ.

200.0

120.0

3.0

12.0

22.0

9.0

23.0

Max.

270.0

5.0

Unit

mA

mS

V

V

dBm

dB

%

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com

1

Specifications subject to change without notice. 6/99A

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