BC817-16W-B0RFG 查看數據表（PDF） - TSC Corporation

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BC817-16W-B0RFG

200mW, PNP Small Signal Transistor

TSC Corporation 

Small Signal Product

BC817-16W/25W/40W

Taiwan Semiconductor

200mW, PNP Small Signal Transistor

FEATURES

- Epitaxial planar die construction

- Surface mount device type

- Moisture sensitivity level 1

- Matte Tin(Sn) lead finish with Nickel(Ni) underplate

- Pb free and RoHS complian

- Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

MECHANICAL DATA

- Case: SOT- 323 small outline plastic package

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260°C/10s

- Weight: 0.005 grams (approximately)

SOT-323

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)

PARAMETER

SYMBOL

VALUE

Power Dissipation

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature Range

Notes: 1. Transistor mounted on a FR4 printed-circuit board

PD

VCBO

VCEO

VEBO

IC

RθJA

TJ , TSTG

200

50

45

5

0.5

625

-55 to + 150

UNIT

mW

V

V

V

A

K/W

°C

PARAMETER

SYMBOL

Collector-Base Breakdown Voltage

at IC = 10 µA

Collector-Emitter Breakdown Voltage

at IC = 10 mA

Emitter-Base Breakdown Voltage

at IE = 10 µA

Collector Cut-off Current

at VCB = 20 V

Emitter Cut-off Current

at VEB = 5 V

Collector-Emitter Saturation Voltage

at IC = 500mA IB = 50 mA

Transition Frequency

VCE = 5 V IC = 10 mA f = 100MHz

at VCE = 1 V , IC = 100 mA

-16W

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

VCE(sat)

fT

DC Current Gain

-25W

hFE

-40W

at VCE = 1 V , IC = 500 mA

MIN

50

45

5

-

-

-

100

100

160

250

40

MAX

-

-

-

100

100

0.7

-

250

400

600

UNIT

V

V

V

nA

nA

V

MHz

Document Number: DS_S1404010

Version: C14

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