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VG26S17405FJ 查看數據表(PDF) - Vanguard International Semiconductor
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VG26S17405FJ
4,194,304 x 4 - Bit CMOS Dynamic RAM
Vanguard International Semiconductor
VG26S17405FJ Datasheet PDF : 27 Pages
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VIS
VG26(V)(S)17405FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
EDO Page Mode Read Modify Write Cycle
Parameter
EDO page mode read- modify- write cycle
CAS precharge to WE delay time
EDO page mode read- modify- write cycle
time
Symbol
t
CPW
VG26(V)(S) 17405
-5
-6
Min Max Min Max
Unit
45
- 55
- ns
Notes
10
t
PRWC
56
- 68
- ns
Document:1G5-0162
Rev.1
Page 13
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