VG26S17405FJ 查看數據表（PDF） - Vanguard International Semiconductor

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VG26S17405FJ

4,194,304 x 4 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor  

VIS

• Delayed Write Cycle

RAS

tT

CAS

tRC

t RAS

tRCD

tCSH

tRSH

tCAS

VG26(V)(S)17405FJ

4,194,304 x 4 - Bit

CMOS Dynamic RAM

tRP

tCRP

tCPN

ADDRESS

WE

OE

DQ1~DQ4

tASR

tRAH

Row

tASC

tCAH

Column

t RCS

tCWL

t RWL

t WP

t OED

t DS

t OEH

tDS

tDH

DIN

Document:1G5-0162

Rev.1

Page 17

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