1N1190 查看數據表（PDF） - Naina Semiconductor ltd.
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1N1190 Datasheet PDF : 2 Pages
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Naina Semiconductor Ltd.
1N1187 thru
1N1190R
Standard Recovery Diode, 35A
Features
Glass passivated die
Low forward voltage drop
High surge capability
Low leakage current
Normal and Reverse polarity
Metric and UNF threads available
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test Conditions Symbol 1N1187(R)
Repetitive peak
reverse voltage
VRRM
300
RMS reverse voltage
VRMS
210
DC blocking voltage
VDC
300
Continuous forward
current
TC ≤ 140oC
IF(AV)
35
Surge non-repetitive
forward current,
half-sine wave
TC = 25oC
IFSM
595
Maximum peak
forward voltage
IF = 35 A, TJ = 25oC
VF
1.2
Reverse current
TJ = 25oC
TJ = 140oC
IR
10
10
1N1188(R)
400
280
400
35
595
1.2
10
10
1N1189(R)
500
350
500
35
595
1.2
10
10
1N1190(R)
600
420
600
35
595
1.2
10
10
Units
V
V
V
A
A
V
µA
mA
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters
Symbol 1N1187(R) 1N1188(R) 1N1189(R)
Thermal resistance, junction to case
Rth(JC)
0.25
0.25
0.25
Operating junction temperature range
TJ -55 to 160 -55 to 160 -55 to 160
Storage temperature
Tstg -55 to 160 -55 to 160 -55 to 160
Mounting torque, non-lubricated threads,
tighting on nut
F
3.4 ± 10%
Approximate weight
W
16
1N1190(R)
0.25
-55 to 160
-55 to 160
Units
oC/W
oC
oC
Nm
g
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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