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TISP61089AS

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS

Power Innovations 

TISP61089AS

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

OCTOBER 1999

The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of

-10 V to -100 V. The protector gate is connected to this negative supply. This references the protection

(clipping) voltage to the negative supply voltage. As the protection voltage will then track the negative supply

voltage the overvoltage stress on the SLIC is minimised.

Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially

clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then

the protector will crowbar into a low voltage on-state condition. As the overvoltage subsides the high holding

current of the crowbar prevents d.c. latchup.

The TISP61089AS is intended to be used with a series combination of a 25 Ω or higher resistance and a

suitable overcurrent protector. Power fault compliance requires the series overcurrent element to open-circuit

or become high impedance (see Applications Information). For equipment compliant to ITU-T

recommendations K20 or K21 only, the series resistor value is set by the power cross requirements. For K20

and K21, a minimum series resistor value of 10 Ω is recommended.

These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high

reliability and in normal system operation they are virtually transparent. The TISP61089AS buffered gate

design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction.

The TISP61089AS is the TISP61089AD with a different pinout. The feed-through Ring (leads 4 — 5) and Tip

(leads 1 — 8) connections have been replaced by single Ring (lead 4) and Tip (lead 1) connections. This

increases package creepage distance of the biased to ground connections from about 0.7 mm to over 3 mm.

This increased spacing eases the design task of compliance with various safety standards, such as UL 1950.

absolute maximum ratings

RATING

Repetitive peak off-state voltage, IG = 0, -40°C ≤ TJ ≤ 85°C

Repetitive peak gate-cathode voltage, VKA = 0, -40°C ≤ TJ ≤ 85°C

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

10/1000 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)

5/320 µs (ITU-T recommendation K20 & K21, open-circuit voltage wave shape 10/700)

1.2/50 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4, Alternative)

2/10 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)

Non-repetitive peak on-state current, VGG = -80 V, 50 Hz to 60 Hz (see Notes 1 and 2)

100 ms

1s

5s

300 s

900 s

Non-repetitive peak gate current, 1/2 µs pulse, cathodes commoned (see Notes 1 and 2)

Operating free-air temperature range

Junction temperature

Storage temperature range

SYMBOL

VDRM

VGKRM

ITSP

ITSM

IGSM

TA

TJ

Tstg

VALUE

-120

-120

UNIT

V

V

30

40

A

100

120

11

4.8

A

2.7

0.95

0.92

40

A

-40 to +85

°C

-40 to +150

°C

-65 to +150

°C

NOTES: 1. Initially the protector must be in thermal equilibrium with -40 °C ≤ TJ ≤ 85 °C. The surge may be repeated after the device returns to

its initial conditions.

2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both

terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the

rated current value of an individual terminal pair). Above 25 °C ambient temperature, derate linearly at -0.6 %/°C. Current values

for other times and gate voltages are shown in Figure 2.

PRODUCT INFORMATION

2

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