BDT61B 查看數據表（PDF） - New Jersey Semiconductor
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BDT61B Datasheet PDF : 2 Pages
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Silicon NPN Darlington Power Transistors
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT61
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDT61A
BDT61B
I 7l"lmA- I — n
BDT61C
VcE(sat) Collector-Emitter Saturation Voltage lc=1.5A; lB=6mA
VsE(on)
ICBO
Base-Emitter On Voltage
BDT61
Collector
Cutoff Current
BDT61A
BDT61B
BDT61C
BDT61
lc=1.5A;VCE=3V
VCB= 60V; IE= 0
VCB=30V;lE=0;Tj=15(rC
VCB= 80V; IE= 0
VCB=40V;lE=0;Tj=150'C
VCB= 100V; IE=0
VCB=50V;lE=0;Tj=150-C
VCB=120V;IE=0
VcB=60V;lE=0;T,j=150'C
VCE= 30V; IB= 0
Collector
ICEO
Cutoff Current
BDT61A VCE= 40V; IB= 0
BDT61B VCE= 50V; la= 0
BDT61C VCE= 60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hFE
DC Current Gain
lc=1.5A;VCE=3V
VECF
C-E Diode Forward Voltage
IE=1.5A
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
lc= 2A; IB1= -lB2= 8mA;
VBE(ofrr -5V; RL= 20 n
BDT61/A/B/C
MIN TYP. MAX UNIT
60
80
V
100
120
2.5
V
2.5
V
0.2
2.0
0.2
2.0
mA
0.2
2.0
0.2
2.0
0.5
0.5
mA
0.5
0.5
5
mA
750
2.0
V
1.0
PS
4.5
us
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