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FZT591 Datasheet PDF : 1 Pages
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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
7
FZT591
C
COMPLEMENTARY TYPE FZT491
PARTMARKING DETAIL - FZT591
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
VALUE
-80
-60
-5
-2
-1
-200
2
-55 to +150
UNIT
V
V
V
A
A
mA
W
°C
UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter Saturation Voltages
V(BR)CBO -80
V(BR)CEO -60
V(BR)EBO -5
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Turn-on Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
VBE(sat)
VBE(on)
hFE
100
100
80
15
fT
150
-100
-100
-100
-0.3
-0.6
-1.2
-1.0
300
V IC=-100µA, IE=0
V IC=-10mA, IB=0*
V IE=-100µA, IC=0
nA VCB=-60V
nA VEB=-4V, IC=0
nA VCES=-60V
V IC=-500mA,IB=-50mA*
V IC=-1A, IB=-100mA*
V IC=-1A, IB=-100mA*
V IC=-1A, VCE=-5V*
IC=-1mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
MHz IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
10
pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT591 datasheet
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