FQB17P06 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FQB17P06 Datasheet PDF : 9 Pages
| |||
Typical Characteristics
V
GS
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
101
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
100
10-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
100
101
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
VGS = - 10V
VGS = - 20V
※ Note : T = 25℃
J
20
40
60
80
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10-1
Coss
Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
175℃
100
25℃
10-1
2
-55℃
※ Notes :
1. VDS = -30V
2. 250μ s Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
175℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
10-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -30V
DS
8
VDS = -48V
6
4
2
※ Note : ID = -17 A
0
0
4
8
12
16
20
24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2. May 2001
Share Link: 