FAN4852 查看數據表（PDF） - ON Semiconductor

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FAN4852

9MHz Low-Power Dual CMOS Amplifier

ON Semiconductor 

Electrical Specifications at +3.3V

+VS=+3.3V, -Vs = 0V, VCM = +Vs/2, and RL = 10KΩ to +Vs/2, unless otherwise noted.

Symbol

Parameter

Condition

Output Voltage Swing High(2)

VO = (+VS) - VOUT

VO

Output Voltage Swing Low(2)

VO = VOUT + (-VS)

RL=2k to V+/2, TA=25˚C

RL=2k to V+/2,

Full Temperature Range

RL=10k to V+/2, TA=25˚C

RL=10k to V+/2,

Full Temperature Range

RL=2k to V+/2, TA=25˚C

RL=2k to V+/2,

Full Temperature Range

RL=10k to V+/2, TA=25˚C

RL=10k to V+/2,

Full Temperature Range

GBW Gain Bandwidth Product

AVOL Large Signal Voltage Gain(3)

RL=2kΩ, VO=0.15 to 1.65V,

VO=3.15 to 1.65V, TA=25˚C

RL=2kΩ, VO=0.15 to 1.65V,

VO=3.15 to 1.65V, Full

Temperature Range

RL=10kΩ, VO=0.1 to 1.65V,

VO=3.2 to 1.65V, TA=25˚C

RL=10kΩ, VO=0.1 to 1.65V,

VO=3.2 to 1.65V, Full

Temperature Range

ROUT Closed-Loop Impedance

f=6MHz

RIN Input Resistance

CIN Input Capacitance

Common Mode

Differential Mode

ΦM Phase Margin

SR Slew Rate

Av=+1, VO=1Vpp 10%-90%

THD+N Total Harmonic Distortion + Noise f=1kHz, Av=1, BW=>500kHz

Notes:

2. 100% tested at TA=25°C.

3. Guaranteed by characterization.

4. EMI rejection ratio is defined as EMIRR – 20log (VRFpeak / ΔVOS).

Min.

100

97

100

97

Typ.

21

4

20

3

9

114

115

6

10

11

6

86

6.1

0.006

Max.

35

43

10

12

32

43

11

14

Unit

mV

mV

MHz

dB

Ω

G

pF

˚

V/µs

%

© 2010 Fairchild Semiconductor Corporation

FAN4852 • Rev. 4.0.0

5

www.fairchildsemi.com

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