LP62S4096EU-55LLI 查看數據表（PDF） - AMIC Technology

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LP62S4096EU-55LLI

512K X 8 BIT LOW VOLTAGE CMOS SRAM

AMIC Technology 

LP62S4096E-I Series

Absolute Maximum Ratings*

VCC to GND ------------------------------------- -0.5V to + 4.0V

IN, IN/OUT Volt to GND--------------- -0.5V to VCC + 0.5V

Operating Temperature, Topr -------------- -40°C to + 85°C

Storage Temperature, Tstg --------------- -55°C to + 125°C

Power Dissipation, PT---------------------------------------- 0.7W

*Comments

Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to this device.

These are stress ratings only. Functional operation of this

device at these or any other conditions above those

indicated in the operational sections of this specification is

not implied or intended. Exposure to the absolute maximum

rating conditions for extended periods may affect device

reliability.

DC Electrical Characteristics (TA = -40°C to + 85°C, VCC = 2.7V to 3.6V, GND = 0V)

Symbol

Parameter

LP62S4096E-55LLI / 70LLI Unit

Min. Typ. Max.

Conditions

⎜ILI⎥ Input Leakage Current

-

-

1

μA

VIN = GND to VCC

⎜ILO⎥ Output Leakage Current

CE1= VIH , CE2= VIL or

-

-

1

μA

OE = VIH WE =VIL

VI/O = GND to VCC

ICC Active Power Supply Current

-

-

5

mA CE1= VIL, CE2= VIH II/O = 0mA

ICC1 Dynamic Operating Current

Min. Cycle, Duty = 100%,

-

20

30

mA

CE1 = VIL CE2= VIH, II/O = 0mA

ICC2 Dynamic Operating Current

ISB

Standby Power

ISB1 Supply Current

VOL Output Low Voltage

VOH Output High Voltage

CE1= VIL, CE2= VIH, VIH = VCC

-

5

15

mA VIL = 0V, f = 1MHZ

II/O = 0mA

-

-

1

mA VCC ≤ 3.3V

CE1= VIH, CE2= VIL

-

0.3

10

μA VCC ≤ 3.3V

CE1≥ VCC - 0.2V, or CE2 ≤ 0.2V

VIN ≤ 0.2V

-

-

0.4

V

IOL = 2.1mA

2.2

-

-

V

IOH = -1.0mA

(May, 2010, Version 3.3)

3

AMIC Technology, Corp.

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