FDS6644 查看數據表（PDF） - Fairchild Semiconductor

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FDS6644

30V N-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

September 2001

FDS6644

30V N-Channel PowerTrench® MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low RDS(ON) and fast switching speed.

Applications

• DC/DC converter

Features

• 13 A, 30 V.

RDS(ON) = 8.5 mΩ @ VGS = 10 V

RDS(ON) = 10.5 mΩ @ VGS = 4.5 V

• High performance trench technology for extremely

low RDS(ON)

• Low gate charge (25 nC typical)

• High power and current handling capability

DD

DD

DD

DD

SO-8

Pin 1 SO-8 SSSS SS GG

5

4

6

3

7

2

8

1

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1c)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6644

FDS6644

13’’

Ratings

30

±16

13

52

2.5

1.4

1.2

–55 to +175

50

125

25

Tape width

12mm

Units

V

V

A

W

°C

°C/W

°C/W

°C/W

Quantity

2500 units

©2001 Fairchild Semiconductor Corporation

FDS6644 Rev A (W)

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