TP0202T 查看數據表（PDF） - Temic Semiconductors
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TP0202T Datasheet PDF : 4 Pages
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TP0202T
P-Channel Enhancement-Mode MOS Transistor
Product Summary
V(BR)DSS Min (V)
–20
rDS(on) Max (W)
1.4 @ VGS = –10 V
3.5 @ VGS = –4.5 V
For applications information see AN804.
VGS(th) (V)
–1.3 to – 3 V
–1.3 to – 3 V
ID (A)
–0.31
–0.16
Features
D High-Side Switching
D Low On-Resistance: 0.9 W
D Low Threshold: –2.1 V
D Fast Switching Speed: 18 ns
D Low Input Capacitance: 55 pF
Benefits
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Switching
D Easily Driven Without Buffer
Applications
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Power Supply, Converter Circuits
D Motor Control
TO-236
(SOT-23)
G1
S2
3D
Top View
TP0202T (P3)*
*Marking Code for TO-236
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Currenta
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
–20
"20
–0.31
–0.25
–0.75
0.2
0.128
625
–55 to 150
V
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #2812.
Applications information may also be obtained via FaxBack, request document #9804.
Siliconix
1
S-44505—Rev. E, 06-Sep-94
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