TP0202T 查看數據表（PDF） - Temic Semiconductors
零件编号
产品描述 (功能)
生产厂家
TP0202T Datasheet PDF : 4 Pages
| |||
TP0202T
Specificationsa
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentc
Drain-Source On-Resistancec
Forward Transconductancec
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingd
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = –10 mA
VDS = VGS, ID = –0.25 mA
VDS = 0 V, VGS = "20 V
VDS = –16 V, VGS = 0 V
TJ = 55_C
VDS = –10 V, VGS = –10 V
VGS = –4.5 V, ID = –0.05 A
VGS = –10 V, ID = –0.2 A
VDS = –10 V, ID = –0.2 A
IS = –0.25 A, VGS = 0 V
Qg
Qgs
VDS –16 V, VGS =–10 V, ID ^ –200 mA
Qgd
Ciss
Coss
VDS = –15 V, VGS = 0 V, f = 1 MHz
Crss
td(on)
tr
td(off)
tf
VDD = –15 V, RL = 75 W
ID ^ –0.2 A, VGEN = -10 V
RG = 6 W
Notes
a. TA = 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
Limits
Min Typb Max Unit
–20
–25
V
–1.3
–2.1
–3
"100
nA
–1
mA
–10
–0.5 –0.75
A
1.7
3.5
W
0.9
1.4
250
600
mS
–0.9
–1.5
V
2700
500
pC
600
55
50
pF
18
8
12
20
30
ns
20
35
30
40
VPBP02
2
Siliconix
S-44505—Rev. E, 06-Sep-94
Share Link: 