BAV99W 查看數據表（PDF） - Galaxy Semi-Conductor
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BAV99W Datasheet PDF : 3 Pages
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Production specification
Dual series switching diode
BAV99W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
Reverse breakdown voltage
V(BR) I(BR)=100μA
75
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Forward recovery voltage
IR
VR=70V
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
CD VR=0V f=1MHz
trr
IF=IR=10mA
RL=100Ω
VFR IF=10mA,tr=20ns
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
MAX UNIT
V
2.5
μA
715
855
1000
mV
1250
1.5
pF
6.0
nS
1.75
V
F007
Rev.A
www.gmesemi.com
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