KSC1009 查看數據表（PDF） - ON Semiconductor

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KSC1009

NPN Epitaxial Silicon Transistor

ON Semiconductor 

September 2015

KSC1009

NPN Epitaxial Silicon Transistor

Features

• High Voltage Amplifier

• High Collector-Base Voltage : VCBO = 160 V

• Collector Current : IC = 700 mA

• Collector Power Dissipation : PC = 800 mW

• Complement to KSA709

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

• Non Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector)

123

Straight Lead

Bulk Packing

TO-92

1. Emitter

12

3

2. Base

3. Collector

Bent Lead

Tape & Reel

Ammo Packing

Ordering Information

Part Number

KSC1009YTA

Top Mark

C1009 Y-

Package

TO-92 3L

Packing Method

Ammo

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

VCBO

VCEO

VEBO

IC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Junction Temperature

Storage Temperature

160

V

140

V

8

V

700

mA

150

°C

-55 to 150

°C

© 2001 Fairchild Semiconductor Corporation

KSC1009 Rev. 1.3

www.fairchildsemi.com

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