KSC1009 查看數據表（PDF） - ON Semiconductor

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KSC1009

NPN Epitaxial Silicon Transistor

ON Semiconductor 

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

PC

RθJA

Collector Power Dissipation

Thermal Resistance, Junction-to-Ambient

800

mW

150

°C/W

Note:

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Conditions

Min.

BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0

160

BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0

140

BVEBO Emitter-Base Breakdown Voltage

IE = 10 μA, IC = 0

8

ICBO

Collector Cut-Off Current

VCB = 60 V, IE = 0

IEBO

Emitter Cut-Off Current

VEB = 5 V, IC = 0

hFE

DC Current Gain

VCE = 2 V, IC = 50 mA

40

VCE(sat) Collector-Emitter Saturation Voltage IC = 200 mA, IB = 20 mA

VBE(sat) Base-Emitter Saturation Voltage

IC = 200 mA, IB = 20 mA

fT

Current Gain Bandwidth Product

VCE = 10 V, IC = 50 mA 30

Cob

Output Capacitance

VCB = 10 V, IE = 0,

f = 1 MHz

Typ.

0.2

0.86

50

8

Max.

0.1

0.1

400

0.7

1.00

Unit

V

V

V

μA

μA

V

V

MHz

pF

hFE Classification

Classification

hFE

R

40 ~ 80

O

70 ~ 140

Y

120 ~ 240

G

200 ~ 400

© 2001 Fairchild Semiconductor Corporation

KSC1009 Rev. 1.3

2

www.fairchildsemi.com

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