KSA910 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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KSA910

TO-92MOD Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

JC(T TO-92MOD Plastic-Encapsulate Transistors

KSA910 TRANSISTOR (PNP)

TO – 92M

TO – 92MOD

1. COLLECTOR

FEATURES

z General Purpose Amplifier Transistor

1. EMITTER

2. BASE

2. COLLECTOR

3. EMITTER

3. BASE

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-150

-150

-5

-50

800

156

150

-55~+150

Unit

V

V

V

mA

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Collector output capacitance

Transition frequency

Symbol

Test conditions

Min Typ Max Unit

V(BR)CBO IC= -100µA,IE=0

-150

V

V(BR)CEO IC=-5mA,IB=0

-150

V

V(BR)EBO IE=-10µA,IC=0

-5

V

ICBO

VCB=-150V,IE=0

-0.1

μA

IEBO

VEB=-5V,IC=0

-0.1

μA

hFE

VCE=-5V, IC=-10mA

40

240

VCE(sat) IC=-10mA,IB=-1mA

-0.8

V

Cob

VCB=-10V,IE=0, f=1MHz

5

pF

fT

VCE=-30V,IC=-10mA

100

MHz

CLASSIFICATION OF hFE

RANK

RANGE

R

40-80

O

70-140

Y

120-240

www.cj-elec.com

1

C,Mar,2016

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