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KSC2383L 查看數據表(PDF) - Secos Corporation.

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KSC2383L Datasheet PDF : 2 Pages
1 2
Elektronische Bauelemente
KSC2383L
1A , 160V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Low collector to emitter saturation voltage VCE(sat).
Audio power amplifier
High Current
CLASSIFICATION OF hFE
Product-Rank
KSC2383L-R
Range
60~120
KSC2383L-O
100~200
KSC2383L-Y
160~320
TO-92L
G
H
J
1Emitter
2Collector
3Base
A
D
B
K
E
CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.70 5.10
7.80 8.20
13.80 14.20
3.70 4.10
0.35 0.55
0.35 0.45
1.27 TYP.
1.28 1.58
2.44 2.64
0.60 0.80
Collector
2
3
Base
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
1
Emitter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
160
160
6
1
0.75
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut - Off Current
Collector Cut - Off Current
Emitter cut-off current
DC Current Gain
Collector to Emitter Saturation Voltage
Base – Emitter Voltage
Transition Frequency
V(BR)CBO
160
-
-
V IC=100µA, IE=0
V(BR)CEO
160
-
-
V IC=10mA, IB=0
V(BR)EBO
6
-
-
V IE=10µA, IC=0
ICBO
-
-
1
µA VCB=150V, IE=0
ICER
-
-
10
µA VCB=150V, REB=10M
IEBO
-
-
1
µA VEB=6V, IC=0
60
-
320
hFE
40
-
-
VCE=5V, IC=200mA
VCE=5V, IC=10mA
VCE(sat)
-
-
1
V IC=500mA, IB=50mA
VBE
-
-
0.75
V VCE=5V, IC=5mA
fT
-
20
-
MHz VCE=5V, IC=200mA
http://www.SeCoSGmbH.com/
15-Sep -2014 Rev. A
Any changes of specification will not be informed individually.
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