KSA931 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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生产厂家

KSA931

TO-92MOD Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JC(T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92MOD Plastic-Encapsulate Transistors

KSA931 TRANSISTOR (PNP)

FEATURE

y Low Frequency Amplifier

y Medium Speed Switching

TO-92MOD

1.EMITTER

2.COLLECTOR

3.BASE

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-8

V

IC

Collector Current -Continuous

-0.7

A

PC

Collector Power Dissipation

1

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55 to +150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

fT

Cob

Test conditions

IC= -100μA, IE=0

IC= -10mA , IB=0

IE= -100μA, IC=0

VCB= -60 V, IE=0

VEB= -5V, IC=0

VCE=-2 V, IC= -50mA

IC= -500mA, IB= -50mA

IC= -500mA, IB= -50mA

VCE= -10 V, IC=-50mA

VCB=-10V,IE=0,f=1MHz

Min

-80

-60

-8

40

Typ

100

13

Max Unit

V

V

V

-0.1

μA

-0.1

μA

320

-0.7

V

-1.2

V

MHz

pF

CLASSIFICATION OF hFE

Rank

Range

R

40-80

O

70-140

Y

120-240

GR

160-320

www.cj-elec.com

1

C,Mar,2016

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