KSH340 查看數據表（PDF） - Fairchild Semiconductor

零件编号

产品描述 (功能)

生产厂家

KSH340

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSH340

High Voltage Power Transistors

D-PAK for Surface Mount Applications

• Lead Formed for Surface Mount Applications (No Suffix)

• Straight Lead (I-PAK, “- I” Suffix)

1

D-PAK 1

I-PAK

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

ICP

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Collector Dissipation (TC=25°C)

Collector Dissipation (Ta=25°C)

Junction Temperature

Storage Temperature

Value

300

300

3

0.5

0.75

15

1.56

150

- 65 ~ 150

Units

V

V

V

A

A

W

W

°C

°C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

VCEO(sus) * Collector Emitter Sustaining Voltage

ICEO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

hFE

* DC Current Gain

* Pulse Test: PW≤300µs, Duty Cycle≤2%

IC = 1mA, IB = 0

VCB = 300V, IE =0

VEB = 3V, IC = 0

VCE = 10V, IC = 50mA

Min.

300

30

Max.

0.1

0.1

240

Units

V

mA

mA

©2002 Fairchild Semiconductor Corporation

Rev. A4, October 2002

Share Link: