isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KSH340
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
ICBO
Collector Cutoff Current
VCB= 300V; IE= 0
IEBO
Emitter Cutoff Current
VEB=3V; IC= 0
hFE1*
DC Current Gain
*:Pulse test PW≤300us,duty cycle≤2%
IC= 50mA; VCE= 10V
MIN
TYP MAX UNIT
300
V
100
uA
100
uA
30
240
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