DTA124EE 查看數據表（PDF） - Galaxy Semi-Conductor
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DTA124EE Datasheet PDF : 3 Pages
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Production specification
Digital Transistor
DTA(R1=R2 SERIES)E
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Input Voltage
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor
Resistance Ratio
DTA114EE
DTA124EE
DTA143EE
DTA144EE
DTA114EE
DTA124EE
DTA143EE
DTA144EE
DTA114EE
DTA124EE
DTA143EE
DTA144EE
DTA114EE
DTA124EE
DTA143EE
DTA144EE
DTA114EE
DTA124EE
DTA143EE
DTA144EE
Gain-Bandwidth Product
VI(off)
VI(on)
VCC=-5V,IO=-100μA
VO=-0.3V,IO=-10mA
VO=-0.2V,IO=-5mA
VO=-0.3V,IO=-20mA
VO=-0.3V,IO=-2mA
-0.5 -1.1
- -1.9
-
V
-3
VO(on)
Io/II=-10mA/-0.5mA, - -0.1 -0.3 V
II
IO(off)
GI
R1(R2)
R2/R1
fT
VI=-5V
VCC=-50V,VI=0V
VO=-5V,IO=-5mA
VO=-5V,IO=-5mA
VO=-5V,IO=-10mA
VO=-5V,IO=-5mA
-
VCE=-10V,IE=5mA,
f=100MHz
-0.88
-0.36
-
-
mA
-1.8
-0.18
-
- -0.5 μA
30
56
-
-
20
68
7 10 13
15.4 22 28.6
3.29 4.7 6.11 kΩ
32.9 47 61.1
0.8 1 1.2
- 250 - MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
H021
Rev.A
www.gmesemi.com
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