HAL573SF-K 查看數據表（PDF） - Unspecified

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HAL573SF-K

Two-Wire Hall Effect Sensor Family

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ADVANCE INFORMATION

HAL575

4.4. HAL 575

The HAL 575 is a medium sensitive latching switching

sensor (see Fig. 4–4).

The sensor turns to high current consumption with the

magnetic south pole on the branded side of the package

and turns to low consumption with the magnetic north

pole on the branded side. The current consumption does

not change if the magnetic field is removed. For chang-

ing the current consumption, the opposite magnetic field

polarity must be applied.

For correct functioning in the application, the sensor re-

quires both magnetic polaritys on the branded side of the

package.

Magnetic Features:

– switching type: latching

– medium sensitivity

– typical BON: 4 mT at room temperature

– typical BOFF: –4 mT at room temperature

– typical temperature coefficient of magnetic switching

points is 0 ppm/K

– operates with static magnetic fields and dynamic mag-

netic fields up to 10 kHz

Applications

The HAL 575 is designed for applications with both mag-

netic polaritys and weak magnetic amplitudes at the

sensor position such as:

– applications with large airgap or weak magnets,

– multipole magnet applications,

– contactless solutions to replace micro switches,

– rotating speed measurement.

Current consumption

IDDhigh

BHYS

IDDlow

BOFF

0

BON

B

Fig. 4–4: Definition of magnetic switching points for

the HAL 575

Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V,

Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points.

Positive flux density values refer to the magnetic south pole at the branded side of the package.

Parameter

TJ

–40 °C

25 °C

100 °C

140 °C

On point BON

Min. Typ. Max.

0.5

4

8

0.5

4

8

0.5

4

8

tbd

–

tbd

Off point BOFF

Min. Typ. Max.

–8

–4

–0.5

–8

–4

–0.5

–8

–4

–0.5

tbd

–

tbd

Hysteresis BHYS

Min. Typ. Max.

5

8

11

5

8

11

5

8

11

tbd

–

tbd

Magnetic Offset

Unit

Min. Typ. Max.

0

mT

0

mT

0

mT

tbd

mT

The hysteresis is the difference between the switching points BHYS = BON – BOFF

The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2

Micronas

15

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