HAL573SF-K 查看數據表（PDF） - Unspecified

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HAL573SF-K

Two-Wire Hall Effect Sensor Family

Unspecified 

ADVANCE INFORMATION

HAL57x, HAL58x

5.4. Ambient Temperature

Due to internal power dissipation, the temperature on

the silicon chip (junction temperature TJ) is higher than

the temperature outside the package (ambient tempera-

ture TA).

TJ = TA + ∆T

At static conditions and continuous operation, the follow-

ing equation is valid:

∆T = IDD * VDD * Rth

For all sensors, the junction temperature range TJ is

specified. The maximum ambient temperature TAmax

can be calculated as:

TAmax = TJmax – ∆T

For typical values, use the typical parameters. For worst

case calculation, use the max. parameters for IDD and

Rth, and the max. value for VDD from the application.

Due to the range of IDDhigh, self-heating can be critical.

The junction temperature can be reduced with pulsed

supply voltage. For supply times (ton) ranging from 30 µs

to 1 ms, the following equation can be used:

DT

+

IDD

*

VDD

*

Rth

*

toff

ton

)

ton

5.5. EMC and ESD

For applications with disturbances on the supply line or

radiated disturbances, a series resistor and a capacitor

are recommended (see Fig. 5–2). The series resistor

and the capacitor should be placed as closely as pos-

sible to the HAL sensor.

Please contact Micronas for detailed information and

first EMC and ESD results.

RV1

100 Ω

VEMC

RV2

30 Ω

1 VDD

4.7 nF

2, 3 GND

Fig. 5–3: Recommended EMC test circuit

Micronas

19

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