HAL573SF-E 查看數據表（PDF） - Unspecified

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HAL573SF-E

Two-Wire Hall Effect Sensor Family

Unspecified 

ADVANCE INFORMATION

HAL57x, HAL58x

3.4. Absolute Maximum Ratings

Symbol

VDD

IDDZ

Parameter

Supply Voltage

Supply Current through

Protection Device

Pin No.

1

1

Min.

–151) 2)

–502)

–2003)

Max.

282)

502)

2003)

TS

Storage Temperature Range

–65

150

TJ

Junction Temperature Range

–40

150

1) –18 V with a 100 Ω series resistor at pin 1 (–16 V with a 30 Ω series resistor)

2) as long as TJmax is not exceeded

2) with a 220 Ω series resistance at pin 1 corresponding to test circuit 1 (see Fig. 5–3)

3) t < 2 ms

Unit

V

mA

mA

°C

°C

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the

“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-

mum ratings conditions for extended periods may affect device reliability.

3.5. Recommended Operating Conditions

Symbol

Parameter

VDD

Supply Voltage

TA

Ambient Temperature for Continuous

Operation

ton

Supply Time for Pulsed Mode

1) when using the the “K” type and VDD ≤ 16 V

Pin No.

1

Min.

3.75

–40

30

Max.

24

851)

–

Unit

V

°C

µs

Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temper-

ature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage

on and off (pulse mode). Please refer to section 5.4. on page 19 for details.

Micronas

7

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