HAL573SF-E 查看數據表（PDF） - Unspecified
零件编号
产品描述 (功能)
生产厂家
HAL573SF-E Datasheet PDF : 20 Pages
| |||
HAL57x, HAL58x
ADVANCE INFORMATION
3.6. Electrical Characteristics at TJ = –40 °C to +140 °C , VDD = 3.75 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol
Parameter
Pin No. Min.
Typ.
Max.
Unit
Conditions
IDDlow
Low Current Consumption
1
5
6
6.9
mA
over Temperature Range
IDDhigh
High Current Consumption
1
over Temperature Range
12
14.3
17
mA
VDDZ
Overvoltage Protection
at Supply
1
–
28.5
32
V
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
fosc
Internal Oscillator
Chopper Frequency
–
90
145
–
kHz
TJ = 25 °C
fosc
ten(O)
tr
tf
RthJSB
case
SOT-89B
Internal Oscillator Chopper Fre- –
quency over Temperature Range
Enable Time of Output after
1
Setting of VDD
Output Rise Time
1
Output Fall Time
1
Thermal Resistance Junction
–
to Substrate Backside
75
145
–
kHz
20
30
µs
1)
0.4
1.6
µs
VDD = 12 V, Rs = 30 Ω
0.4
1.6
µs
VDD = 12 V, Rs = 30 Ω
–
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–3
RthJA
Thermal Resistance Junction
–
–
150
200
K/W
case
to Soldering Point
TO-92UA
1) B > BON + 2 mT or B < BOFF – 2 mT for HAL 57x,
B > BOFF + 2 mT or B < BON – 2 mT for HAL 58x
5.0
2.0
2.0
1.0
Fig. 3–3: Recommended pad size SOT-89B
Dimensions in mm
8
Micronas
Share Link: 