HA-5004/883 查看數據表（PDF） - Intersil
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HA-5004/883 Datasheet PDF : 5 Pages
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Die Characteristics
DIE DIMENSIONS:
63 x 93 x 19 mils ± 1 mils
1600 x 2370 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over (Silox, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
Metallization Mask Layout
HA-5004/883
WORST CASE CURRENT DENSITY:
6.6 x 104A/cm2
SUBSTRATE POTENTIAL (Powered Up): VEE
TRANSISTOR COUNT: 64
PROCESS: Bipolar Dielectric Isolation
HA-5004/883
OE
TOI
GND
TOL
V+
IN
-BAL
FB
+BAL
V-
VC-
VC+ OUT
5
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