5962-9163401M2A 查看數據表（PDF） - Intersil
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5962-9163401M2A Datasheet PDF : 10 Pages
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HA-5221/883
Die Characteristics
DIE DIMENSIONS:
72 x 94 x 19 mils ± 1 mils
1840 x 2400 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
4.2 x 104A/cm2
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 62
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5221/883
V-
+IN
-IN
-BAL
+BAL
OUT
V+
5
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