HER151 查看數據表（PDF） - Diode Semiconductor Korea

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HER151

HIGH EFFICIENCY RECTIFIERS

Diode Semiconductor Korea 

Diode Semiconductor Korea

HER151 --- HER158

FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

50

10

N 1.

N 1.

trr

+0.5A

(+)

50VDC

(approx)

(-)

D.U.T.

1

NONIN-

DUCTIVE

OSCILLOSCOPE

(NOTE 1)

PULSE

GENERATOR

(NOTE2)

0

-0.25A

-1.0A

1cm

NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.

JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .

SET TIME BASE FOR 20/30 ns/cm

FIG.2 -- TYPICAL FORWARD CHARACTERISTIC

100

10

1 .0

TJ=25

P u ls e W id th = 3 0 0 µ S

5 0 \1 0 0 \2 0 0 V

0 .1

3 0 0 \4 0 0 V

6 0 0 \8 0 0 \1 0 0 0 V

0 .0 1

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

FIG.4 -- TYPICAL JUNCTION CAPACITANCE

200

100

60

40

20

10

6

4

　　　　 TJ=25

2

1

0.1 0.2 0.4 1

HER156-HER158

HER151-HER155

24

10 20 40 100

REVERSE VOLTAGE,VOLTS

FIG.3 -- FORWARD DERATING CURVE

3.0

2.0

Single Phase Half Wave 60HZ

Resistive or Inductive Load

0.375"(9.5mm)Lead Length

1.0

0

0 25

50 75 100 125 150 175

AMBIENT TEMPERATURE,

FIG.5 -- PEAK FORWARD SURGE CURRENT

50

40

30

20

10

0

1

TJ=25℃

8.3ms Single Half

Sine-Wave

5

10

50 100

NUMBER OF CYCLES AT 60Hz

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