HEF4555BT(2018) 查看數據表（PDF） - NXP Semiconductors.
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HEF4555BT Datasheet PDF : 10 Pages
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10. Static characteristics
Table 6. Static characteristics
VSS = 0 V; VI = VSS or VDD unless otherwise specified.
Symbol Parameter
Conditions
VDD
VIH
HIGH-level input voltage |IO| < 1 μA
5V
10 V
15 V
VIL
LOW-level input voltage |IO| < 1 μA
5V
10 V
15 V
VOH
HIGH-level output voltage |IO| < 1 μA;
5V
VI = VSS or VDD
10 V
15 V
VOL
LOW-level output voltage |IO| < 1 μA;
5V
VI = VSS or VDD
10 V
15 V
IOH
HIGH-level output current VO = 2.5 V
VO = 4.6 V
VO = 9.5 V
VO = 13.5 V
IOL
LOW-level output current VO = 0.4 V
VO = 0.5 V
5V
5V
10 V
15 V
5V
10 V
VO = 1.5 V
15 V
II
input leakage current
VDD = 15 V
15 V
IDD
supply current
IO = 0 A;
VI = VSS or VDD
5V
10 V
15 V
CI
input capacitance
-
HEF4555B
1-of-4 decoder/demultiplexer
Tamb = -40 °C
Min Max
3.5
-
7.0
-
11.0 -
-
1.5
-
3.0
-
4.0
4.95 -
9.95 -
14.95 -
- 0.05
- 0.05
- 0.05
-
-1.7
- -0.52
-
-1.3
-
-3.6
0.52 -
1.3
-
3.6
-
- ±0.3
-
20
-
40
-
80
-
-
Tamb = 25 °C
Min Max
3.5
-
7.0
-
11.0 -
-
1.5
-
3.0
-
4.0
4.95 -
9.95 -
14.95 -
- 0.05
- 0.05
- 0.05
-
-1.4
- -0.44
-
-1.1
-
-3.0
0.44 -
1.1
-
3.0
-
- ±0.3
-
20
-
40
-
80
-
7.5
Tamb = 85 °C Unit
Min Max
3.5
-V
7.0
-V
11.0 - V
-
1.5 V
-
3.0 V
-
4.0 V
4.95 - V
9.95 - V
14.95 - V
- 0.05 V
- 0.05 V
- 0.05 V
-
-1.1 mA
- -0.36 mA
-
-0.9 mA
-
-2.4 mA
0.36 - mA
0.9
- mA
2.4
- mA
- ±1.0 μA
-
150 μA
-
300 μA
-
600 μA
-
- pF
HEF4555B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 15 October 2018
© Nexperia B.V. 2018. All rights reserved
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