HS-508BRH 查看數據表（PDF） - Intersil
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HS-508BRH Datasheet PDF : 4 Pages
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Die Characteristics
DIE DIMENSIONS
120 mils x 93 mils x 19 mils
INTERFACE MATERIALS
Glassivation
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8kÅ ±1kÅ
Top Metallization
Type: AlSiCu
Thickness: 16kÅ ±2kÅ
Substrate
Rad Hard Silicon Gate
Dielectric Isolation
Metallization Mask Layout
HS-508BRH
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
6.68e04 A/cm2
Transistor Count
506
HS-508BRH
IN2
IN1 -V
(5)
(4) (3)
PIN NUMBER
1
2
3
4
5
6
7
8
IN3
(6)
EN
IN4
(2)
(7)
OUT
(8)
A0
(1)
IN8
A1
(9)
(16)
IN7
(10)
A2
(15)
IN6
(11)
IN5
+V GND
(12)
(13) (14)
TABLE 2. HS-508BRH PAD COORDINATES
RELATIVE TO PIN 1
PAD NAME
X COORDINATES
Y COORDINATES
A0
0
0
EN
-342
0
V-
-818
-653
IN1
-818
-879
IN2
-818
-1221
IN3
-598
-2579
IN4
-224
-2579
OUT
-38
-2579
3
FN4824.2
August 11, 2009
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