BST50 查看數據表（PDF） - NXP Semiconductors.
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BST50 Datasheet PDF : 9 Pages
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NXP Semiconductors
NPN Darlington transistors
Product data sheet
BST50; BST51; BST52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tj
Tamb
Tstg
PARAMETER
collector-base voltage
BST50
BST51
BST52
collector-emitter voltage
BST50
BST51
BST52
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
junction temperature
ambient temperature
storage temperature
CONDITIONS
open emitter
VBE = 0 V
open collector
Tamb ≤ 25 °C; note 1
MIN.
MAX.
UNIT
−
60
V
−
80
V
−
90
V
−
45
V
−
60
V
−
80
V
−
5
V
−
1
A
−
2
A
−
100
mA
−
1.3
W
−
150
°C
−65
+150
°C
−65
+150
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
Rth(j-s)
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
96
K/W
16
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Dec 09
3
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