NTE388 查看數據表（PDF） - Inchange Semiconductor

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NTE388

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

NTE388

DESCRIPTION

·With TO-3 packaging

·Large collector current

·Low collector saturation voltage

·High power dissipation

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for use in DC-DC converter

·Driver of solenoid or motor

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

400

V

VCEO

Collector-Emitter Voltage

250

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

16

A

ICP

Collector Current-Pulse

30

A

IB

Base Current-Continuous

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

5

A

33

W

0.26

-65~200

℃

Tstg

Storage Temperature Range

-65~200

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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