BB101M 查看數據表（PDF） - Renesas Electronics
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BB101M Datasheet PDF : 8 Pages
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BB101M
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 5 V
RG = 150 kΩ
20 f = 1 kHz
4V
3V
15
2V
10
5
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 5 V
RG = 390 kΩ
20 f = 1 kHz
15
4V
3V
2V
10
5
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Noise Figure vs. Gate Resistance
4
3
2
1 VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 900 MHz
0
50 100 200
500 1000 2000
5000
Gate Resistance RG (kΩ)
Rev.3.00 Aug 10, 2005 page 5 of 7
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 5 V
RG = 220 kΩ
20 f = 1 kHz
4V
3V
15
2V
10
5
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Power Gain vs. Gate Resistance
30
25
20
15
10
5
0
50
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 900 MHz
100 200
500 1000 2000
5000
Gate Resistance RG (kΩ)
Power Gain vs. Drain Current
30
25
20
15
10 VDS = 5 V
VG1 = 5 V
5 VG2S = 4 V
RG = variable
f = 900 MHz
0
5 10 15 20 25 30
Drain Current ID (mA)
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