BB101M 查看數據表（PDF） - Renesas Electronics
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BB101M Datasheet PDF : 8 Pages
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BB101M
Noise Figure vs. Drain Current
4
3
2
VDS = 5 V
1 VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
0
5 10 15 20 25 30
Drain Current ID (mA)
Gain Reduction vs.
Gate2 to Source Voltage
40
VDS = 5 V
VG1 = 5 V
30
VG2S = 4 V
RG = 220 kΩ
f = 900 MHz
20
10
0
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
Output Capacitance vs.
Gate2 to Source Voltage
4
VDS = 5 V
VG1 = 5 V
3
RG = 220 kΩ
f = 1 MHz
2
1
0
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
Drain Current vs. Gate Resistance
30
25
20
15
10
5
VDS = 5 V
VG1 = 5 V
0 VG2S = 4 V
10 30 100 300 1000 3000 10000
Gate Resistance RG (kΩ)
Input Capacitance vs.
Gate2 to Source Voltage
4
VDS = 5 V
VG1 = 5 V
3
RG = 220 kΩ
f = 1 MHz
2
1
0
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
Rev.3.00 Aug 10, 2005 page 6 of 7
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